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IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Rivista
Codice:
E183611
ISSN:
1531-1309
Dati Generali
Dati Generali
Pubblicazioni (10)
Determination and validation of new nonlinear FinFET model based on lookup tables
Articolo
High-frequency extraction of the extrinsic capacitances for GaN HEMT technology
Articolo
Kink Effect in S22 for GaN and GaAs HEMTs
Articolo
Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination
Articolo
Scalability of Multifinger HEMT Performance
Articolo
Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
Articolo
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs
Articolo
Temperature Influence on GaN HEMT Equivalent Circuit
Articolo
The kink phenomenon in the transistor S22: a systematic and numerical approach
Articolo
Waveforms only based nonlinear de-embedding in active devices
Articolo
No Results Found
