Data di Pubblicazione:
2016
Abstract:
The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for highpower and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.
Tipologia CRIS:
14.a.1 Articolo su rivista
Keywords:
Equivalent circuit, Gallium nitride (GaN), High electron-mobility transistor (HEMT), Temperature, Condensed Matter Physics, Electrical and Electronic Engineering
Elenco autori:
Crupi, Giovanni; Raffo, Antonio; Avolio, Gustavo; Schreurs, Dominique M. M. P.; Vannini, Giorgio; Caddemi, Alina
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