Quantum theory of spatially resolved photoluminescence in semiconductor quantum wells

We present a microscopic quantum theory of spatially resolved photoluminescence in quantum structures with interface fluctuations that includes light quantization, acustic phonon scattering, and inhomogeneous sample‐excitation and/or light‐detection. The obtained numerically calculated images agree with images from near‐field photoluminescence experiments and put forward the potentials of the method for the understanding of near‐field light emission from semiconductor quantum structures.