Laser annealing of P and Al implanted 4H-SiC epitaxial layers

Academic Article

Publication Date:

2019

Iris type:

14.a.1 Articolo su rivista

Keywords:

Aluminum; Ion implantation; Laser annealing; Phosphorus; Photoluminescence; Point defects;Metal Oxide Semiconductor Field Effect Transistor (MOSFET); Raman; SiC; TEM

List of contributors:

Calabretta, C.; Agati, M.; Zimbone, M.; Boninelli, S.; Castiello, A.; Pecora, A.; Fortunato, G.; Calcagno, L.; Torrisi, L.; La Via, F.

Authors of the University:

TORRISI Lorenzo

Handle:

https://iris.unime.it/handle/11570/3149367

Published in:

MATERIALS

Journal

Overview

URL

https://res.mdpi.com/d_attachment/materials/materials-12-03362/article_deploy/materials-12-03362.pdf

Laser annealing of P and Al implanted 4H-SiC epitaxial layers

Calabretta, C.; Agati, M.; Zimbone, M.; Boninelli, S.; Castiello, A.; Pecora, A.; Fortunato, G.; Calcagno, L.; Torrisi, L.; La Via, F.

MATERIALS

Overview

URL